凝聚态物理
居里温度
霍尔效应
材料科学
磁电阻
兴奋剂
镧
自旋电子学
各向异性
铁磁性
电阻率和电导率
磁场
化学
物理
无机化学
量子力学
作者
Yi Zhang,Xuegang Chen,Xianghao Ji,Heng Wang,Biao Zheng,Mingzhu Xue,Jinbo Yang,Mingliang Tian
摘要
Perpendicular magnetic anisotropic NiCo2O4 (NCO) films show volatile physical properties due to the complicated ion occupation/valence disproportion, making it feasible to be manipulated. In this work, the tunable anomalous Hall effect is observed in high-quality lanthanum (La) doped NCO films grown by the off-axis RF sputtering technique. It reveals that the longitudinal resistance (Rxx) significantly increases as the growth of La doping level, while the Curie temperature (TC) decreases with the rising of La doping level. A universal scaling law between the longitudinal conductance (σxx) and the anomalous Hall conductance (σxy), including the terms of dirty scaling mechanism, intrinsic contribution, and side jump, is proposed to explain the observed anomalous Hall effect. Additionally, an intrinsic linear relation between σxx and TC is revealed. The evolution of anomalous Hall resistance (RA), TC, and Rxx is closely related to the complex valence state/occupation of Ni ions induced by La doping. This work provides a strategy to manipulate the physical properties of NCO film, making it a potential material for spintronic applications.
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