缓冲器(光纤)
材料科学
电解质
图层(电子)
氧化物
电化学
氧化钇稳定氧化锆
化学工程
固体氧化物燃料电池
缓冲溶液
电极
分析化学(期刊)
化学
纳米技术
色谱法
复合材料
计算机科学
立方氧化锆
冶金
物理化学
电信
陶瓷
工程类
作者
Chanchan Wang,Quan Yang,Yanzhi Ding,Xiaoyong Lu,Dong Tian
标识
DOI:10.1016/j.cplett.2023.140981
摘要
It is well known that the introduction of buffer layers can enhance the electrical performance of SSOFCs. Hence, we studied varying ratios of Gd-doped CeO2 as a buffer layer and applied it to YSZ-based SSOFCs. The results demonstrate that the performance is enhanced by adding a buffer layer to the single cell, which is superior compared to that without the buffer layer. The highest performance was obtained when Ce0.8Gd0.2O2-δ (GDC20) was used as the buffer layer. The results suggest the use of GDC series buffer layers as an attractive strategy to optimize the performance loss due to electrolyte-electrode interactions.
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