碳化硅
国家(计算机科学)
硅
计算机科学
材料科学
光电子学
冶金
程序设计语言
作者
Veronika Švárna,Michal Frivaldský
标识
DOI:10.1109/elektro60337.2024.10556881
摘要
This article provides an overview of the most recent developments in silicon carbide research. It provides a brief history of silicon carbide and an overview of devices that use SiC technology today. A short description of the SiC power electronic devices is provided. The article also dives into current trends in $\text{SiC}$ applications and topologies where $\text{SiC}$ power electronics are used. At the end of this article, a quick comparison between classic silicon and modern silicon carbide technology is presented, along with challenges for the future development of the given technology.
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