High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact

Abstract β-Ga 2 O 3 power diodes were expected to possess low turn-on voltage ( V on ), low reverse leakage ( J R ), and high blocking capability for low power losses. In this work, a low V on (0.48 V) β-Ga 2 O 3 heterojunction barrier Schottky diode (HJBS) with tungsten Schottky contact was achieved. Benefitting from the lateral depletion of p + -NiO to suppress J R originating from the low Schottky barrier, the blocking capability of β-Ga 2 O 3 HJBS was enhanced. The spacing width of p + -NiO was systematically studied to reveal its modulation effect on forward and reverse characteristics. This work provides a promising strategy for improving rectifier efficiency of β-Ga 2 O 3 diodes.