材料科学
外延
化学气相沉积
结晶度
磷化铟
微晶
光电子学
基质(水族馆)
光伏
光致发光
薄膜
能量转换效率
半导体
铟
化学工程
纳米技术
图层(电子)
光伏系统
砷化镓
冶金
复合材料
工程类
地质学
海洋学
生物
生态学
作者
Maxwell Zheng,Zhibin Yu,Tae Joon Seok,Yu‐Ze Chen,Rehan Kapadia,Kuniharu Takei,Shaul Aloni,Joel W. Ager,Ming C. Wu,Yu‐Lun Chueh,Ali Javey
摘要
III–V semiconductor solar cells have demonstrated the highest power conversion efficiencies to date. However, the cost of III-V solar cells has historically been too high to be practical outside of specialty applications. This stems from the cost of raw materials, need for a lattice-matched substrate for single-crystal growth, and complex epitaxial growth processes. To address these challenges, here, we explore the direct non-epitaxial growth of thin poly-crystalline films of III-Vs on metal substrates by using metalorganic chemical vapor deposition. This method minimizes the amount of raw material used while utilizing a low cost substrate. Specifically, we focus on InP which is known to have a low surface recombination velocity of carriers, thereby, making it an ideal candidate for efficient poly-crystalline cells where surface/interface properties at the grain boundaries are critical. The grown InP films are 1-3 μm thick and are composed of micron-sized grains that generally extend from the surface to the Mo substrate. They exhibit similar photoluminescence peak widths and positions as single-crystalline InP, as well as excellent crystallinity as examined through TEM and XRD analyses. This work presents poly-InP as a promising absorber layer for future photovoltaics.
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