激子
物理
Wannier函数
半导体
凝聚态物理
带隙
结合能
比克西顿
电介质
材料科学
莫特跃迁
量子力学
赫巴德模型
超导电性
作者
Alexis S. Toulouse,Benjamin P. Isaacoff,Guangsha Shi,M. Matuchová,Emmanouil Kioupakis,R. Merlín
标识
DOI:10.1103/physrevb.91.165308
摘要
Optical measurements and first-principles calculations of the band structure and exciton states in direct-gap bulk and few-layer PbI2 indicate that the n = 1 exciton is Frenkel-like in nature in that its energy exhibits a weak dependence on thickness down to atomic-length scales. Results reveal large increases of the gap and exciton binding energy with decreasing number of layers, and a transition of the fundamental gap, which becomes indirect for 1-2 monolayers. Calculated values are in reasonable agreement with a particle-in-a-box model relying on the Wannier-Mott theory of exciton formation. General arguments and existing data suggest that the Frenkel-like character of the lowest exciton is a universal feature of wide-gap layered semiconductors whose effective masses and dielectric constants give bulk Bohr radii that are on the order of the layer spacing.
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