功勋
碲化铋
导线
铋
凝聚态物理
热电效应
塞贝克系数
半导体
材料科学
散射
物理
热力学
光学
光电子学
冶金
复合材料
作者
R. P. Chasmar,R. Stratton
标识
DOI:10.1080/00207215908937186
摘要
ABSTRACT The expression for the figure of merit of a semi-conductor of given carrier mobility and lattice thermal conductivity expressed in terms of generalized Fermi-Dirae functions has been numerically evaluated for various scattering indices. The results are presented graphically enabling the maximum figure of merit to be found. High-temperature limitations due to minority carrier production are considered in relation to the energy gap of the semi-conductor. The results are discussed in connection with bismuth telluride and other sulphides, selenides and telluridos of the heavy metals.
科研通智能强力驱动
Strongly Powered by AbleSci AI