Bottom‐Up Growth of n‐Type Polymer Monolayers for High‐Performance Complementary Integrated Circuits

Abstract Downscaling the semiconductor into ultrathin film is of vital importance to high‐performance field–effect transistors (FETs), but the high‐mobility FETs based on conjugated polymer monolayers have been rarely realized. Especially, the lack of high‐performance n‐type polymer monolayer FETs hinders the development of complementary integrated circuits. Herein, by fine‐tuning the supramolecular assembly of two thiazole flanked naphthalene diimide‐based conjugated polymers, the ≈2.5 nm‐thick monolayers with well‐defined fibrillar morphology are grown in a controllable way, where the one‐dimensional solution‐state structures are inherited. The resultant monolayer FETs show the electron mobility up to 0.25 cm 2 V −1 s −1 , among the record for n‐type polymer monolayer FETs. More importantly, the first demonstration of polymer monolayer complementary integrated circuits is present, and a record‐high inverter gain of 113 is achieved, which is also identical to the best polymer thin‐film inverters.