材料科学
热导率
声子散射
散射
界面热阻
声子
密度泛函理论
分子动力学
薄膜
热的
复合材料
凝聚态物理
热阻
纳米技术
热力学
光学
计算化学
物理
化学
作者
Guoliang Ma,Xiong Xiao,Biwei Meng,Yunliang Ma,Xuteng Xing,Xinhua Wang,Fengwen Mu,Chao Yuan
标识
DOI:10.1021/acsami.4c02161
摘要
Surface-active bonding (SAB) is a promising technique for semiconductors directly bonding. However, the interlayer of the bonding interface and the reduced layer thickness may affect thermal transport. In this study, the temperature-dependent cross-plane thermal conductivity of 4H-SiC thin films and the effective thermal boundary resistance (TBReff) of the bonding SiC-on-SiC are measured by the multiple-probe wavelength nanosecond transient thermoreflectance (MW-TTR). The measured temperature-dependent cross-plane thermal conductivity of the 4H-SiC thin film exhibits good quantitative agreement with calculation by density functional theory (DFT) including higher-order four-phonon (4ph) scattering, especially at high temperatures (>400 K). The theoretical calculations indicate the non-negligible importance of 4ph scattering in 4H-SiC high-temperature applications, due to the significantly increasing 4ph scattering rate at increasing temperature and strong temperature dependence of 4ph scattering. The measured nonzero but small TBReff (2.33 + 0.43/-1.15 m2 K/GW) at the SiC-SiC interface is analyzed with molecular dynamics (MD) simulation, indicating that a strong bonding interface with an extremely thin interlayer is formed by the SAB process. Two-dimensional finite element simulations of the experimental equivalent structures are further investigated, and the significant effects (at least 19 °C) of TBReff on the maximum temperature (Tmax) are confirmed. This study provides insight into the fundamental phonon transport and interface thermal transport mechanism in SAB SiC-on-SiC and paves the way for improved 4H-SiC efficient device manufacturing and thermal management.
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