Realization of artificial synapses using high-performance soybean resistive memory

Resistive memory is one of the important components for building neuromorphic systems, which can be used as artificial synapses to transmit information. Natural biomaterials are naturally degradable materials, and artificial synaptic devices fabricated from them are particularly important for sustainable green electronics development. Here, on the basis of soybean material as a dielectric layer, we embed gold nanoparticles into it to obtain better memory properties. The switching current ratio of the resistive memory after embedding gold nanoparticles is increased, up to 105, which avoids the possibility of misreading errors during data storage and provides a powerful condition for realizing multilevel behavior. In addition, the device was also demonstrated to simulate the synaptic potentiation/depression function, and the results indicated that the high-performance soybean resistive memory has high-density data storage and exhibits great potential in applications as artificial synapses.