Enhanced performance of Sn-doped Na3V2(PO4)3 with CNT integration for high-efficiency sodium-ion batteries

兴奋剂 材料科学 离子 电导率 掺杂剂 化学工程 电极 涂层 离子半径 纳米技术 光电子学 化学 物理化学 有机化学 工程类
作者
Haodi Dong,Changcheng Liu,Que Huang,Yanjun Chen
出处
期刊:Journal of Colloid and Interface Science [Elsevier]
卷期号:660: 356-369 被引量:3
标识
DOI:10.1016/j.jcis.2024.01.088
摘要

The development of Na3V2(PO4)3 (NVP) has been severely hindered by low conductivity and unstable crystal structure. A simultaneously optimized strategy of Na-rich and Sn substitution is proposed for the first time. SnX-NVP@CNTs with different doping gradients are successfully prepared by the facile sol-gel method. Notably, more hole carriers can be generated by introducing Sn2+, thus improving its electron transport efficiency. In addition, since Sn2+ ions have a larger ion radius; when replacing V3+ ions at pillar positions, the lattice spacing can be enlarged to improve the structural stability of electrode materials. Meanwhile, it is beneficial to the movement of deep-level Na+ ions and improves the utilization rate of electrode materials. Moreover, to achieve charge compensation, it is necessary to introduce excess Na+ to the Sn-doped NVP system, which will increase the number of Na+ involved in the deintercalation process and improve its reversible capacity. Furthermore, the dense coating of CNTs can form an efficient conductive network structure, which improves the electron transport rate and inhibits the accumulation of active grains to accelerate Na+ diffusion. Under the synergistic adjustment of Sn2+ doping and CNTs enwrapping, the prepared Sn0.07-NVP@CNTs exhibit a high reversible capacity of 115.1 mAh/g at 0.1C, and the capacity retention rate reaches 89.35 % after 2000 cycles at 10C. Even after 10,000 cycles at 60C, its reversible capacity dropped from the initial 75.9 to 51.3 mAh/g, with a capacity loss of only 0.003 % per cycle. Besides, the Sn0.07-NVP@CNTs//CHC full battery releases a capacity of 139.9 mAh/g, highlighting its great potential for actual applications.

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