六方氮化硼
光子
材料科学
光电子学
塞尔效应
光子学
波长
电场
Q系数
基质(水族馆)
单光子源
氮化硼
物理
光学
纳米技术
自发辐射
量子点
量子力学
谐振器
激光器
石墨烯
地质学
海洋学
作者
Shun Cao,Yi Jin,Hongguang Dong,Tingbiao Guo,Jinlong He,Sailing He
出处
期刊:JPhys materials
[IOP Publishing]
日期:2021-03-31
卷期号:4 (3): 035001-035001
被引量:10
标识
DOI:10.1088/2515-7639/abf3ce
摘要
Abstract A patterned structure of monolithic hexagonal boron nitride (hBN) on a glass substrate, which can enhance the emission of the embedded single photon emitters (SPEs), is useful for onchip single-photon sources of high-quality. Here, we design and demonstrate a monolithic hBN metasurface with quasi-bound states in the continuum mode at emission wavelength with ultrahigh Q values to enhance fluorescence emission of SPEs in hBN. Because of ultrahigh electric field enhancement inside the proposed hBN metasurface, an ultrahigh Purcell factor (3.3 × 10 4 ) is achieved. In addition, the Purcell factor can also be strongly enhanced in most part of the hBN structure, which makes the hBN metasurface suitable for e.g. monolithic quantum photonics.
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