铁电性
非易失性存储器
材料科学
场效应晶体管
晶体管
矫顽力
四方晶系
光电子学
反铁电性
电介质
凝聚态物理
电压
相(物质)
电气工程
化学
物理
有机化学
工程类
作者
C.-Y. Liao,K.-Y. Hsiang,Z.-F. Lou,Cheng-Hung Lin,Yi-Ju Tseng,Hung Tseng,Zhixian Li,W.-C. Ray,K.-Y. Hsiang,Chun‐Chieh Wang,Tzu-Chiang Chen,Chih‐Sheng Chang,Min‐Hung Lee
出处
期刊:IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control
[Institute of Electrical and Electronics Engineers]
日期:2022-06-01
卷期号:69 (6): 2214-2221
被引量:4
标识
DOI:10.1109/tuffc.2022.3165047
摘要
An ultralow program/erase voltage ( |VP/E| = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field ( EC ) concept for a four-level stable state with outstanding endurance (>105 cycles) and data retention (>104 s at 65 °C). The mixture of ferroelectric (FE) and AFE domains can provide stable multistate and data storage with zero bias for multilevel cell (MLC) applications. HfZrO2 (HZO) with AFE-FE assembles an orthorhombic/tetragonal (o/t) phase composition and is achieved by [Zr] modulation in an HZO system. MLC characteristics not only improve high-density nonvolatile memory (NVM) but are also beneficial to neuromorphic device applications.
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