数码产品
电力电子
纳米技术
工程物理
材料科学
电气工程
工程类
电压
作者
Nicolas G. Wright,Alton B. Horsfall,Konstantin Vassilevski
标识
DOI:10.1016/s1369-7021(07)70348-6
摘要
There has been substantial international research effort in the development of SiC electronics over the last ten years. With promising applications in power electronics, hostile-environment electronics, and sensors, there is considerable industrial interest in SiC as a material for electronics. However, issues relating to crystal growth and the difficulties of material processing have restricted SiC devices to relatively limited use to date. The eventual success of SiC as an electronic technology will depend on the close interplay of research in fundamental material science with progress in design of electronic devices and packaging. We review the current status of SiC electronics from a materials perspective – highlighting current difficulties and future opportunities for progress.
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