Organic Nano-Floating-Gate Memory with Polymer:[6,6]-Phenyl-C61 Butyric Acid Methyl Ester Composite Films

Here, we report on a pentacene-based, nonvolatile transistor memory device with poly(4-vinyl phenol) (PVP):[6,6]-phenyl-C 61 butyric acid methyl ester (PCBM) nano-composite films as the charge storage site. Incorporation of PCBM molecules into PVP dielectric materials as charge storage sites for electrons resulted in a reversible shift in the threshold voltage ( V Th ) and reliable memory characteristics. The characteristics of the pentacene memory device were as follows: a relatively high field-effect mobility (µ FET ) (0.2–0.3 cm 2 V -1 s -1 ) with a large memory window ( ca. 20 V), a high on/off ratio (∼10 4 ) during writing and erasing with application of an operating gate voltage of 60 V for a short duration time (∼1 ms), and a retention time of about 40 h.