P‐20: Towards High‐Performance and Cost‐Effective Top‐Gated Oxide TFTs with Hybrid‐Phase Microstructural Channels

A new type of oxide semiconductor with hybrid‐phase microstructure was introduced, and the general top‐gated TFTs exhibited high, stable and spatially uniform electrical performance. Moreover, the modified top‐gated devices with one mask reduction were demonstrated, enabling more cost‐effective manufacturing. The acquired process impacts could further guide the realization of self‐aligned devices.