绝缘栅双极晶体管
可靠性(半导体)
门驱动器
功率(物理)
工程类
电气工程
钥匙(锁)
功率半导体器件
可靠性工程
电子工程
电压
计算机科学
计算机安全
量子力学
物理
作者
Huiqing Du,Jun Wei,Yuming Liu,Ke Sun,Xiran Sun
出处
期刊:Lecture notes in electrical engineering
日期:2022-01-01
卷期号:: 267-277
标识
DOI:10.1007/978-981-16-9905-4_32
摘要
High voltage and high current IGBT power modules are widely used in many fields. The gate drivers play important roles in ensuring safe, efficient and reliable operation of IGBT power modules. Based on the comparative analysis of existing products from domestic and foreign mainstream gate driver manufacturers, this paper analyzes and collates the main functions and different technical paths of IGBT gate drivers. By comparison, conventional analog drive method exists inherent defects, and digital drive method is the direction of future development. In this work, the system structure and main working principles of digital drivers are analyzed. Key technologies and development trends of the gate drivers are summarized, which lays the groundwork for further improving the efficiency, reliability and intelligence of IGBT power modules.
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