$1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared

百叶窗 像素 量子点 光电子学 红外线的 物理 量子效率 材料科学 计算机科学 光学
作者
Jonathan S. Steckel,E. Josse,Andras G. Pattantyus‐Abraham,M. Bidaud,B. Mortini,H. Bilgen,O. Arnaud,Stéphane Allegret-Maret,F. Saguin,Lucie Mazet,S. Lhostis,T. Berger,K. Haxaire,L.L. Chapelon,L. Parmigiani,P. Gouraud,M. Brihoum,P. Bar,M. Guillermet,S. Favreau,Romain Duru,J. Fantuz,Stéphane Ricq,D. Ney,Ismail Hammad,D. Roy,Arthur Arnaud,B. Vianne,Goutham Nayak,Nicolas Virollet,Vincent Farys,P. Malinge,A. Pérez‐Tomás,F. Lalanne,Axel Crocherie,J. Galvier,S. Rabary,O. Noblanc,Helene Wehbe-Alause,S. Acharya,Ajay Singh,J. Meitzner,D. Aher,H. Yang,J. Romero,B. Chen,C. Hsu,K. C. Cheng,Y. Chang,M. Sarmiento,C. Grange,E. Mazaleyrat,K. Rochereau
标识
DOI:10.1109/iedm19574.2021.9720560
摘要

We have developed a $1.62\mu \mathrm{m}$ pixel pitch global shutter sensor optimized for imaging in the near infrared (NIR) and shortwave infrared (SWIR) regions of the light spectrum. This breakthrough was made possible through the use of our colloidal Quantum Dot (QD) thin film technology, which we have named Quantum Film (QF). We have scaled up this new platform technology to our 300mm manufacturing toolset. The challenges associated with the introduction of solution-processed, colloidally grown lead sulfide (PbS) QDs in an industrial 300mm fab environment were successfully overcome. The QF photodiodes, leveraging either NIR or SWIR sensitive QDs, were optimized for high quantum efficiency (QE), low dark current and immunity to operating stress. Global shutter pixel arrays, with pixel pitch of $2.2\mu \mathrm{m}$ and $1.62\mu \mathrm{m}$ exhibit unprecedented QE of >50% and MTF @ Nyquist/2 of 0.75 and 0.6, respectively. The robustness of our 300mm Quantum Film technology was fully assessed and reliability in terms of meeting all required lifetime specifications for consumer electronics and other potential applications has been demonstrated.
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