Numerical simulation of the NiO as hole transport layer in CH3NH3PbBr3 perovskite based-solar cell using SCAPS-1D

With the SCAPS-1D simulator, a full digital simulation and modeling on the perovskite solar cell was performed using the perovskite methylammonium lead tribromide material MAPbBr 3 for various parameters such as open circuit voltage (V oc ), fill factor (FF), power conversion efficiency (PCE) and short-circuit current density (J sc ). The electronic properties of the MAPbBr 3 material used as the active layer were calculated. The effects of NiO layer concentration, MAPbBr 3 layer thickness and temperature on photovoltaic parameters on perovskite solar cell (n-ITO/ n-PCBM (ETL)/ p-MAPbBr 3 /p-NiO (HTL)) were examined. The simulation of the solar cell based on perovskite MAPbBr 3 allowed us to find the following values $(\mathrm{V}_{\text{oc}}=1.0476\ \mathrm{V},\ \mathrm{J}_{\text{sc}}=7.9745\ \text{mA}/\text{cm}^{2},\ \text{FF}= 77.85\%,\ \text{PCE}=6.5\%$ ). Our results were compared with published experimental values and also simulated by SCAPS-1D, and they showed good agreement.