材料科学
催化作用
电荷(物理)
空位缺陷
氧气
光化学
化学物理
纳米技术
化学工程
化学
物理
结晶学
量子力学
工程类
有机化学
作者
Rongfang Zhang,Xingming Ning,Ze Wang,Huihuan Zhao,Yaorong He,Zhengang Han,Peiyao Du,Xiaoquan Lu
出处
期刊:Small
[Wiley]
日期:2022-04-17
卷期号:18 (20)
被引量:37
标识
DOI:10.1002/smll.202107938
摘要
Abstract Semiconductor/co‐catalyst coupling is considered as a promising strategy to enhance the photoelectrochemical (PEC) conversion efficiency. Unfortunately, this model system is faced with a serious interface recombination problem, which limits the further improvement of PEC performances. Here, a FeNiOOH co‐catalyst with abundant oxygen vacancies on BiVO 4 is fabricated through simple and economical NaBH 4 reduction to accelerate hole transfer and achieve efficient electron–hole pair separation. The photocurrent of the BV (BiVO 4 )/Vo‐FeNiOOH system is more than four times that of pure BV. Importantly, the charge transfer kinetics and charge carrier recombination process are studied by scanning photoelectrochemical microscopy and intensity modulated photocurrent spectroscopy in detail. In addition, the oxygen vacancy regulation proposed is also applied successfully to other semiconductors (Fe 2 O 3 ), demonstrating the applicability of this strategy.
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