量子点
铟
晶格常数
吸光度
硫化锌
化学计量学
光致发光
化学
拉曼光谱
分散性
锌
四方晶系
分析化学(期刊)
闪锌矿
材料科学
晶体结构
纳米技术
物理化学
结晶学
光电子学
矿物学
有机化学
衍射
色谱法
光学
物理
黄铁矿
作者
Xianliang Wang,Jossana A. Damasco,Wei Shao,Yujie Ke,Mark T. Swihart
出处
期刊:ChemPhysChem
[Wiley]
日期:2015-11-06
卷期号:17 (5): 687-691
被引量:18
标识
DOI:10.1002/cphc.201500746
摘要
Abstract II–III–VI semiconductors are of interest due to their chemical stability and composition‐tunable optical properties. Here, we report a methodology for the synthesis of monodisperse zinc–indium–sulfide (ZIS) alloy quantum dots (QDs, mean diameter from ∼2 to 3.5 nm) with an In content substantially below that of the stoichiometric ZnIn 2 S 4 compound. The effects of indium incorporation on the size, lattice constant, and optical properties of ZIS QDs are elucidated. In contrast to previous reports, we employ sulfur dissolved in oleic acid as the sulfur donor rather than thioacetamide (TAA). The size of the ZIS QDs and their crystal lattice constant increased with increasing In incorporation, but they maintained the cubic sphalerite phase of ZnS, rather than the hexagonal phase typical of ZnIn 2 S 4 . The QDs’ absorbance onset at UV wavelengths red‐shifts with increasing In content and the accompanying increase in NC size. The ZIS NCs and related materials, whose synthesis is enabled by the approach presented here, provide new opportunities to apply II–III–VI semiconductors in solution‐processed UV optoelectronics.
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