氧化铟锡
材料科学
铟
纳米晶材料
煅烧
化学工程
薄膜
浸涂
氢氧化物
锡
扫描电子显微镜
溶胶凝胶
图层(电子)
涂层
无机化学
纳米技术
复合材料
冶金
化学
有机化学
催化作用
工程类
作者
László Kőrösi,Szilvia Papp,Imre Dékány
标识
DOI:10.1016/j.tsf.2010.12.160
摘要
Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol–gel technique involving the use of aqueous InCl3, SnCl4 and NH3 solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV–Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ~ 40–1160 nm. After calcination at 550 °C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.
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