Control of the dielectric constant of indium tin oxide film

Indium tin oxide is a widely used transparent conductive oxide material. It has many excellent characteristics, such as low loss in the near-infrared region, the band gap can be adjusted by doping and other methods. ITO has recently been shown to be a good substitute for metal layer, it has obvious advantages in improve the performance of optoelectronic devices and reduce the difficulty of preparation, and it makes it possible to expand the application range of optoelectronic devices based on the multilayer film system from the visible light region to the near-infrared region. Although a large number of literatures have reported the properties of ITO films, there are few studies on ITO as a substitute for the metal layer in the multilayer film system and regulating its dielectric constant properties. In this paper, ITO films were prepared by ion beam sputtering deposition at relatively low temperature, and the dielectric constant of ITO films was regulated by change the process conditions and annealing treatment. Through experiments, we realized the regulation of near-zero point in the range of 1380nm to 2420nm, and demonstrated the change rule of the dielectric constant. Compared with metal films, optical metamaterials and devices based on ITO films can not only expand their application range from the previously visible light region to the near-infrared region, but also have wider and adjustable frequency coverage