石墨烯
材料科学
凝聚态物理
氮化硼
噪音(视频)
兴奋剂
基质(水族馆)
电子
费米能级
Crystal(编程语言)
载流子
晶体缺陷
物理
光电子学
纳米技术
量子力学
人工智能
计算机科学
图像(数学)
海洋学
地质学
程序设计语言
作者
Chandan Kumar,Anindya Das
摘要
Low frequency 1/f noise is investigated in graphene, encapsulated between the hexagonal boron nitride (hBN) substrate in dual gated geometry. The overall noise magnitude is smaller as compared to graphene on the Si/SiO2 substrate. The noise amplitude in the hole doped region is independent of carrier density, while in the electron doped region, a pronounced peak is observed at Fermi energy, EF∼90 meV. The physical mechanism of the anomalous noise peak in the electron doped region is attributed to the impurity states originating from the Carbon atom replacing the nitrogen site in the hBN crystal. Furthermore, the noise study near the Dirac point shows a characteristic “M-shape,” which is found to be strongly correlated with the charge inhomogeneity region near the Dirac point.
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