Doping and Transport

Chapter 5 Doping and Transport Julien Pernot, Julien PernotSearch for more papers by this authorFabrice Donatini, Fabrice DonatiniSearch for more papers by this authorPierre Tchoulfian, Pierre TchoulfianSearch for more papers by this author Julien Pernot, Julien PernotSearch for more papers by this authorFabrice Donatini, Fabrice DonatiniSearch for more papers by this authorPierre Tchoulfian, Pierre TchoulfianSearch for more papers by this author Book Editor(s):Vincent Consonni, Vincent ConsonniSearch for more papers by this authorGuy Feuillet, Guy FeuilletSearch for more papers by this author First published: 30 June 2014 https://doi.org/10.1002/9781118984321.ch5Citations: 1 AboutPDFPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShareShare a linkShare onEmailFacebookTwitterLinkedInRedditWechat Summary This chapter presents an exhaustive method to study the transport properties of doped GaN and ZnO nanowires (NW) and microwires (MW) in light of recent results published in the literature. The chapter first describes an original lithography process perfectly well suited to connect ZnO NW and GaN MW. It then dedicates to the electrical transport techniques, which can be used in the case of NW and MW. An analysis of the carrier mobility extracted from such measurements is discussed and compared to bulk case. A local probe technique based on cathodoluminescence is used to investigate exciton diffusion length and space charge region extension in NW. 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