异质结
材料科学
光电探测器
钙钛矿(结构)
光电子学
响应度
石墨烯
整改
纳米技术
电气工程
化学工程
工程类
电压
作者
Fang Chen,Haizhen Wang,Zixi Shen,Hongzhi Shen,Shuai Wang,Jiaqi Ma,Jun Wang,Hongmei Luo,Dehui Li
标识
DOI:10.1021/acsami.8b20538
摘要
Two-dimensional (2D) Ruddlesden-Popper perovskites have attracted great interest for their promising applications in high-performance optoelectronic devices owing to their greatly tunable band gaps, layered characteristics, and better environmental stability over three-dimensional (3D) perovskites. Here, we for the first time report on photodetectors based on few-layer MoS2 (n-type) and lead-free 2D perovskite (PEA)2SnI4 (p-type) heterostructures. The heterojunction device is capable of sensing light over the entire visible and near-infrared wavelength range with a tunable photoresponse peak. By using few-layer graphene flakes as the electrical contact, the performance of the heterostructures can be improved with a responsivity of 1100 A/W at 3 V bias, a fast response speed of ∼40 ms under zero bias, and an excellent rectification ratio of 500. Importantly, the quantum efficiency can achieve 38.2% at zero bias, which is comparable or even higher than that of 3D perovskite/2D material photodetectors. Importantly, the spectral response peak of heterojunctions gradually shifts in a wide spectral range from the band edge of MoS2 toward that of (PEA)2SnI4 with the external bias. We believe these 2D perovskite/2D material heterostructures with a great diversity represent an interesting system for investigating the fundamental optoelectronic properties and open up a new pathway toward 2D perovskite-based optoelectronic devices.
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