Color centers in AlN as qubit candidates: point defect management

AlN as an UWBG host for quantum emitters, especially color centers, is expected to address current challenges such as operation at room temperature and scalability of quantum-photonic devices for qubit applications. Significant challenges in the point defect management and existence of multiple defects charge states precludes the use of AlN as a simple practical host for qubits. In this work, a roadmap for the stabilization of Ti-related color centers in AlN for quantum computing applications is presented. The realization of (TiAlVN)0 defects as a candidate for single spin color center requires the control of the Fermi level of AlN via doping, a nitrogen vacancy supersaturation via implantation, and the use of CPC and dQFL control methods to suppress the formation of other defects. This work opens a pathway for the systematic management of color centers with particular charge states in nitrides for quantum computing applications.