Dislocation Suppresses Sidewall‐Surface Recombination of Micro‐LEDs

Abstract Nonradiative recombination rate that consists of dislocation‐related nonradiative recombination rate ( A 0 ) and surface recombination rate ( A s ) is one of the major parameters determining the performance of microlight‐emitting diodes (µLEDs). Recent demonstrations improving the efficiency of blue InGaN or red AlGaInP µLEDs using specific methods such as atomic layer deposition or chemical treatment confirm the suppression of A s . However, it is hardly found that those methods effectively improve the efficiency of red InGaN µLEDs so far. Here, it is discovered that the dislocation leads to an ineffective A s . First, an intrinsic A s degrades the external quantum efficiency (EQE) of blue InGaN µLEDs, resulting in EQE decreases with shrinking size. Second, panchromatic cathodoluminescence finds evidence that most of the carriers can be trapped before reaching the sidewall due to high A 0 . This results in shortened diffusion length of carriers and reduces the number of carriers reaching the sidewall. Consequently, the opposite trend of increasing EQE with shrinking size occurs in the case of red InGaN µLEDs due to an ineffective A s . Furthermore, an 8.3 nm quantum well of InGaN with 13% Indium content that can reach a ≈690 nm wavelength at the low current is shown.