光电探测器
光电子学
线极化
材料科学
极化(电化学)
旋光法
等离子体子
光学
偏压
圆极化
物理
电压
激光器
化学
物理化学
量子力学
散射
微带线
作者
Xiaofei Ma,Zeping Wang,Qinggang Qin,Jiawang Chen,Xue Liu,Fengxia Zou,Zhengyu Xu,Wei Chen,Guanghai Li,Yuan Li,Tianyou Zhai,Liang Li
标识
DOI:10.1002/adma.202500572
摘要
On-chip polarized photodetectors play a crucial role in advancing ultra-compact optoelectronic devices for next-generation technologies. However, simultaneously detecting the angle of linear polarization (AoLP) and the degree of linear polarization (DoLP) within a single device remains a challenging task, particularly due to the inherently weak polarization states found in naturally anisotropic materials. In this paper, it is reported on the development of a twisted monopole barrier photodetector based on a PdSe2/MoS2/PdSe2 configuration. This photodetector features a rapid response time of 7-12 µs. In an imaging demonstration, it operates as a single-polarization photodetector, reconstructing AoLP and DoLP distributions of target objects through bias-switchable polarization detection across a wide spectral range, all without the plasmonic/metasurface nanostructures or polarization filters. Additionally, it demonstrates bipolar characteristics under zero-bias conditions at room temperature, enabling dual-binary coding for polarimetric-encoded communication. These combination of features positions the photodetector as a highly promising candidate for on-chip applications.
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