噪声系数
饱和(图论)
功勋
低噪声放大器
光放大器
数据库管理
放大器
功率(物理)
电子工程
炸薯条
电气工程
计算机科学
光电子学
材料科学
光学
工程类
物理
CMOS芯片
激光器
组合数学
量子力学
数学
作者
S. P. Yu,Antonin Gallet,Iosif Demirtzioglou,S. Azouigui,Nayla El Dahdah,R. Brenot
标识
DOI:10.1109/jqe.2024.3356366
摘要
We introduce a semiconductor optical amplifier (SOA) chip with high gain (>40 dB) and high saturation power (>21 dBm) with moderate drive current (1.3A). A design model for optimizing the new dual-section SOA concept is presented. The model predictions are in very good agreement with the measurement results on fabricated chips. Using the gain and saturation output power product as the figure of merit, it shows the best-reported trade-off result so far. However, due to the slight degradation of the noise figure that ensued, an advanced design is introduced, enabling the optimization of the noise figure in addition to the gain and saturation output power.
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