晶体管
数码产品
集成电路
半导体
材料科学
电子线路
场效应晶体管
半导体器件
纳米技术
光电子学
工程物理
电气工程
工程类
电压
图层(电子)
作者
Lei Yin,Ruiqing Cheng,J. Ding,Jian Jiang,Yutang Hou,Xiaoqiang Feng,Yao Wen,Jun He
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-03-08
卷期号:18 (11): 7739-7768
被引量:8
标识
DOI:10.1021/acsnano.3c10900
摘要
Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.
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