A lost cost broadband GaAs pHEMT low noise amplifier

A monolithic microwave integrated circuit (MMIC) low noise amplifier(LNA) is designed in this paper. It can obtain the low noise and high linearity with a broadband gain flatness. In order to verify this design, this LNA are tested at different temperatures. The results show that its S-parameters, P1dB, noise figure (NF) and output third-order intersection point (OIP3) all degrade with the increase of temperature. That is to say it is sensitive to temperature changes. Thus, this research results of this paper can provide some useful guidance for the MMIC design.