纤锌矿晶体结构
带隙
材料科学
兴奋剂
氮化物
半导体
光电子学
杂质
铟
有效质量(弹簧-质量系统)
凝聚态物理
氮化硼
半金属
格子(音乐)
宽禁带半导体
纳米技术
化学
物理
冶金
锌
有机化学
图层(电子)
量子力学
声学
出处
期刊:Elsevier eBooks
[Elsevier]
日期:2011-01-01
卷期号:: 390-447
被引量:9
标识
DOI:10.1016/b978-0-44-453153-7.00114-0
摘要
This chapter reviews the published information concerning the electronic energy levels created within the valence-band to conduction-band energy gap of crystalline boron nitride, aluminum nitride, gallium nitride, and indium nitride by the presence of lattice defects and impurities. Knowledge and understanding of the band-gap levels that can occur in these group-III semiconductors are essential for producing effective p-type and n-type doping as well as for optimization of their properties, including electrical conductivity, carrier mobilities, and optical luminescence, for their many electronic and optoelectronic applications. Theoretical and experimental data for the zincblende and wurtzite structures are considered in detail, and certainties and uncertainties concerning the energy levels and their likely impurity or defect identities are assessed.
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