Optical and electronic properties in(In0.53Ga0.47As)1−z∕

The optical and electronic properties in ${({\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As})}_{1\ensuremath{-}z}∕{({\mathrm{In}}_{0.52}{\mathrm{Al}}_{0.48}\mathrm{As})}_{z}$ digital alloys with various compositions grown on InP substrates by using molecular-beam epitaxy were investigated through photoluminescence (PL) measurements and numerical calculations. The electronic subband energy states, the interband transition energies, and the exciton binding energies of ${({\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As})}_{1\ensuremath{-}z}∕{({\mathrm{In}}_{0.52}{\mathrm{Al}}_{0.48}\mathrm{As})}_{z}$ digital alloys and corresponding ${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}∕{\mathrm{In}}_{0.52}{\mathrm{Al}}_{0.48}\mathrm{As}$ single quantum wells were calculated by using a finite difference method, taking into account two band Hamiltonian system. The numerical results for interband transitions of ${({\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As})}_{1\ensuremath{-}z}∕{({\mathrm{In}}_{0.52}{\mathrm{Al}}_{0.48}\mathrm{As})}_{z}$ digital alloys were in reasonable agreement with the excitonic transitions obtained from the PL measurements.