石墨烯
材料科学
异质结
范德瓦尔斯力
肖特基势垒
电子能带结构
紫外线
化学物理
调制(音乐)
凝聚态物理
纳米技术
光电子学
分子
量子力学
物理
二极管
声学
作者
Xiaoqing Ma,Yanqi Mu,Guancai Xie,Hongfeng Wan,Weixuan Li,Mengshan Li,Haitao Dai,Beidou Guo,Jian Gong
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2021-07-20
卷期号:32 (41): 415703-415703
被引量:2
标识
DOI:10.1088/1361-6528/ac1095
摘要
Two-dimensional (2D) van der Waals heterojunctions have many unique properties, and energy band modulation is central to applying these properties to electronic devices. Taking the 2D graphene/MoS2heterojunction as a model system, we demonstrate that the band structure can be finely tuned by changing the graphene structure of the 2D heterojunction via ultraviolet/ozone (UV/O3). With increasing UV/O3exposure time, graphene in the heterojunction has more defect structures. The varied defect levels in graphene modulate the interfacial charge transfer, accordingly the band structure of the heterojunction. And the corresponding performance change of the graphene/MoS2field effect transistor indicates the shift of the Schottky barrier height after UV/O3treatment. The result further proves the effective band structure modulation of the graphene/MoS2heterojunction by UV/O3. This work will be beneficial to both fundamental research and practical applications of 2D van der Waals heterojunction in electronic devices.
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