Identification of (Tb,Eu)9.43(SiO4)6O2−δ Oxy-Apatite Structures as Nanometric Inclusions in Annealed (Eu,Tb)-Doped ZnO/Si Junctions: Combined Electron Diffraction and Chemical Contrast Imaging Studies

(Tb,Eu)-doped ZnO-annealed films at 1100 °C showed intense photoluminescense (PL) emission from Eu and Tb ions. The high-temperature annealing led to a chemical segregation and a secondary Zn-free phase formation that is suspected to be responsible for the high PL intensity. Large faceted inclusions of rare-earth (RE) silicates of a size of few hundred nanometers were observed. Owing to various advanced electron microscopy techniques, a detailed microstructural study of these nanometric inclusions combining atomic Z contrast imaging (STEM) and precession electron diffraction tomography (PEDT) data was carried out and resulted in the determination of a hexagonal P63/m-type (Tb,Eu)9.43(SiO4)6O2−δ structure related to an oxy-apatite structure. Chemical analyses from spectroscopic data (energy-dispersive X-ray mapping and electron energy loss spectroscopy) at the atomic scale showed that both RE elements sitting on two independent (4f) and (6h) atomic sites have three-fold oxidation states, while refinements of their occupancy sites from PEDT data have evidenced preferential deficiency for the first one. The deduced RE–O distances and their corresponding bond valences are listed and discussed with the efficient energy transfer from Tb3+ toward Eu3+.