NMOS逻辑
纳米线
材料科学
光电子学
场效应晶体管
晶体管
MOSFET
绝缘体上的硅
电介质
吸收剂量
硅
辐射
光学
电压
电气工程
物理
工程类
作者
Jonathan Riffaud,Marc Gaillardin,Claude Marcandella,M. Martinez,Philippe Paillet,Olivier Duhamel,Thierry Lagutère,Mélanie Raine,Nicolas Richard,F. Andrieu,S. Barraud,M. Vinet,O. Faynot
出处
期刊:IEEE Transactions on Nuclear Science
[Institute of Electrical and Electronics Engineers]
日期:2018-01-01
卷期号:65 (1): 39-45
被引量:24
标识
DOI:10.1109/tns.2017.2776326
摘要
This paper investigates the total ionizing dose (TID) sensitivity of nanowire (NW) field-effect transistors (NWFETs). Both X-ray irradiations and self-consistent calculations of charge trapping in dielectrics are performed to study their TID response. First of all, the impact of the NW geometry is investigated. The NWFET TID behavior exhibits a strong dependence as a function of the NWs width while shortening the gate length does not significantly change the TID characteristics of optimized narrow NWFETs. Furthermore, the effect of the bias configuration used during irradiation is discussed to state if nMOS NWFETs could withstand significant amount of TID in several operation conditions.
科研通智能强力驱动
Strongly Powered by AbleSci AI