Broad-Spectrum Ultrathin-Metal-Based Oxide/Metal/Oxide Transparent Conductive Films for Optoelectronic Devices

材料科学 光电子学 透射率 兴奋剂 薄膜 薄板电阻 氧化物 透明导电膜 溅射 图层(电子) 电极 金属 纳米技术 冶金 化学 物理化学
作者
Zhang Liu,Yalu Zou,Chengang Ji,Xinliang Chen,Guofu Hou,Cong Zhang,Xiangjian Wan,L. Jay Guo,Ying Zhao,Xiaodan Zhang
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:13 (49): 58539-58551 被引量:14
标识
DOI:10.1021/acsami.1c16691
摘要

High-quality transparent conductive materials are beneficial to improve the charge transfer and light transmittance and reduce the interface defects as well as the production cost of optoelectronic devices. A high threshold thickness of metal layer in oxide/metal/oxide (OMO) compound thin films leads to strong reflectance, especially in the near-infrared region, limiting the broad-spectrum device applications. Here, we propose a novel Zn doping strategy using the low-cost single-target sputtering technology to achieve the growth of Ag-Zn thin films (i.e., Zn-doped Ag) and introduce a trace amount of O2 to further obtain ultrathin Ag-Zn(O) films (thin-film thickness d ≤ 5 nm), which greatly improves the broad-spectrum characteristics of OMO films. Heterogeneous metal and gas doping technology effectively promotes the formation of two-dimensional continuous film growth. By combining the ultrathin Ag-Zn(O) layer with the MGZO (i.e., Mg- and Ga co-doped ZnO) oxide film grown by reactive plasma deposition, a typical broad-spectrum MGZO/Ag-Zn(O)/MGZO (50/5/50 nm)-OMO compound thin film exhibits an average transmittance of 91.6% in the wavelength range of 400-1200 nm and low sheet resistance. The broad-spectrum organic solar cells based on MGZO/Ag-Zn(O)/MGZO electrodes present a high power conversion efficiency of 15.35%, superior to those devices based on single-layer oxide electrodes. The distinguished performances are attributed to the ultrathin Ag-Zn(O) films in OMO, paving the way for applications in broad-spectrum optoelectronic and flexible electronic devices.
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