Effect of CO2 laser (9.3 μm) irradiation and AmF/NaF/SnCl2 solution in prevention and control of erosive tooth wear, an in-situ study

搪瓷漆 事后 轮廓仪 辐照 牙科 激光器 材料科学 硬组织 牙齿磨损 复合材料 表面粗糙度 医学 光学 物理 核物理学
作者
Juliane de Paula Tavares,Camila Vieira da Silva,Yael Engel,Patrícia Moreira de Freitas,Peter Rechmann
标识
DOI:10.1117/12.2614560
摘要

Objectives: The cross-over in-situ study aimed to evaluate the effect of CO2 laser (9.3μm) irradiation, in combination with an AmF/NaF/SnCl2 rinse on prevention and control of Erosive Tooth Wear (ETW) in human enamel. Materials and Methods: Two different settings were tested with, 1) as ETW-prevention (starting from sound tooth surfaces) (Setting-1), and 2) as ETW-control (substrates presented at start an artificial erosive lesion) (Setting-2). Additionally, in in one subset samples were exposed to AmF/NaF/SnCl2 solution (Phase I) while in the other no exposure to the Fluoridetin rinse occurred (Phase). 192 samples of human enamel (3x3x1mm) were randomly divided into 4 experimental groups: (C) without treatment (negative control); (F) AmF/NaF/SnCl2 solution (positive control); (L) CO2 laser irradiation; (L+F) CO2 laser+AmF/NaF/SnCl2 solution. 12 volunteers wearing removable devices participated in the study, carrying 8 samples per device. The erosive challenges (4×5min/day) occurred ex-vivo. The surface loss over time was measured using an optical profilometer (n=12 per group). Setting-1 data were analyzed by one-way ANOVA and Setting-2 data by two-way repeated measures ANOVA, both with Tukey post-hoc tests (α=5%). Results: Setting-1: groups L (4.59 ±2.95μm) and L+F (1.58±1.24μm) showed significantly less surface loss in preventing ETW than groups C and F. Setting-2: in controlling the progression of ETW, L+F was the only group with no significant surface loss between initial erosive lesion (3.65 ±0.16μm) and after erosive challenge (4.99 ±1.17μm). Conclusions: CO2 9.3μm laser application prevented and controlled ETW progression in human enamel, with greater efficiency when combined with AmF/NaF/SnCl2 solution application.*
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