Complementary logic-in-memory inverters integrating n-channel and p-channel ferroelectric organic transistors

The emerging logic-in-memory (LIM) technology is a promising strategy to overcome the von Neumann bottleneck in modern computers. For LIM circuits, the complementary structure is desirable for low-power consumption. To date, there have been rare reports on the n-channel organic thin-film transistor nonvolatile memories (OTFT-NVMs), which is indispensable for building the complementary LIM circuits. In this Letter, we demonstrate a route to achieve the low-voltage operatable n-channel OTFT-NVMs, by blade-coating an ultrathin tetratetracontane buffer layer on the oxygen plasma treated ferroelectric terpolymer insulator with a low coercive field. The n-channel OTFT-NVMs exhibit good performances, with a high electron mobility over 0.1 cm2/V s, highly reliable endurance over 1000 cycles, and highly stable retention over 10 000 s. The mechanism for improving device performances is discussed. Moreover, the mechanism and the route for improving performances are also suitable for p-channel OTFT-NVMs. Furthermore, the LIM architecture-based complementary organic inverters are constructed by integrating the n-channel and p-channel OTFT-NVMs, which can well perform logic and memory operations at the low voltage of 10 V. The work laid the foundation for the development of the LIM circuits.