锌黄锡矿
材料科学
蒸发
薄膜太阳能电池
晶粒生长
冶金
太阳能电池
纳米技术
化学工程
光电子学
粒度
捷克先令
物理
工程类
热力学
作者
Yue Jian,Litao Han,Xiangrui Kong,Tianliang Xie,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Shengjie Yuan,Yuena Meng,Yafang Qi,Guangxing Liang,Xianghua Zhang,Zhi Zheng,Sixin Wu
标识
DOI:10.1002/smtd.202400041
摘要
Abstract High‐crystalline‐quality absorbers with fewer defects are crucial for further improvement of open‐circuit voltage ( V OC ) and efficiency of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. However, the preparation of high‐quality CZTSSe absorbers remains challenging due to the uncontrollability of the selenization reaction and the complexity of the required selenization environment for film growth. Herein, a novel segmented control strategy for the selenization environment, specifically targeting the evaporation area of Se, to regulate the selenization reactions and improve the absorber quality is proposed. The large evaporation area of Se in the initial stage of the selenization provides a great evaporation and diffusion flux for Se, which facilitates rapid phase transition reactions and enables the attainment of a single‐layer thin film. The reduced evaporation area of Se in the later stage creates a soft‐selenization environment for grain growth, effectively suppressing the loss of Sn and promoting element homogenization. Consequently, the mitigation of Sn‐related deep‐level defects on the surface and in the bulk induced by element imbalance is simultaneously achieved. This leads to a significant improvement in nonradiative recombination suppression and carrier collection enhancement, thereby enhancing the V OC . As a result, the CZTSSe device delivers an impressive efficiency of 13.77% with a low V OC deficit.
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