8‐inch Wafer‐scale Epitaxial Monolayer MoS2

Abstract Large‐scale, high‐quality, and uniform monolayer MoS 2 films are crucial for their applications in next‐generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high‐quality MoS 2 films and has been demonstrated at a wafer scale up to 4‐inch. In this study, we report the epitaxial growth of 8‐inch wafer‐scale highly oriented monolayer MoS 2 on sapphire with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as‐grown 8‐inch wafer‐scale monolayer MoS 2 film were fabricated and exhibited high performances, with an average mobility and an on/off ratio of 53.5 cm 2 V −1 s −1 and 10 7 , respectively. In addition, batch fabrication of logic devices and 11‐stage ring oscillators were also demonstrated, showcasing excellent electrical functions. Our work may pave way of MoS 2 in practical industry‐scale applications. This article is protected by copyright. All rights reserved