Template-Assisted Dry Transfer Doping of Two-Dimensional Semiconductors

Doping has been extensively studied as an effective means of modulating the electrical properties of two-dimensional (2D) semiconductors. However, precise methods for p- and n-type doping in specific regions remain underdeveloped, hindering high-performance devices and integrated circuits. We present a novel technique, template-assisted dry transfer doping (TADTD), which enables precise control over doping regions, patterns, polarities, and levels in 2D semiconductors. Utilizing photolithography, TADTD allows for the creation of patterned dopant films that are transferred to MoTe2 without the damaging effects of traditional methods. The effectiveness of TADTD is demonstrated through the fabrication of p- and n-type MoTe2 field-effect transistors (FETs) using molecular dopants Magic Blue and N-DMBI, respectively. Additionally, we construct functional complementary logic circuits, including inverters and NAND and NOR gates, utilizing selectively doped MoTe2 channels. The precise doping control achieved with TADTD highlights its potential for advancing 2D semiconductor technology and integration into future CMOS applications.