分子束外延
兴奋剂
材料科学
外延
霍尔效应
分析化学(期刊)
等离子体
二极管
宽禁带半导体
光谱学
光电子学
化学
电阻率和电导率
图层(电子)
纳米技术
物理
量子力学
工程类
色谱法
电气工程
作者
I. P. Smorchkova,E. Haus,B. Heying,P. Kozodoy,P. Fini,J. P. Ibbetson,S. Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra
摘要
GaN:Mg layers grown by plasma-assisted molecular-beam epitaxy at 650 °C are investigated. Secondary-ion-mass-spectroscopy measurements reveal uniform Mg doping profiles with very sharp boundaries. The amount of incorporated Mg atoms changes approximately linearly with incident Mg flux. Hall measurements on p-type GaN:Mg layers show that about 1%–2% of all Mg atoms are ionized at room temperature. The hole mobility depends strongly on the hole concentration, varying from μp=24 cm2/V s for p=1.8×1017 cm−3 to μp=7.5 cm2/V s for p=1.4×1018 cm−3. GaN p–n diodes with molecular-beam-epitaxy-grown p regions are analyzed using current–voltage measurements.
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