光电子学
材料科学
放大器
光子学
光放大器
炸薯条
带宽(计算)
波长
硅光子学
光功率
半导体
硅
光子集成电路
光学
制作
基质(水族馆)
CMOS芯片
电气工程
物理
电信
激光器
计算机科学
工程类
地质学
病理
海洋学
替代医学
医学
作者
Nicolas Volet,Alexander Spott,Eric J. Stanton,Michael L. Davenport,Lin Chang,Jon Peters,Travis C. Briles,I. Vurgaftman,J. R. Meyer,John E. Bowers
标识
DOI:10.1002/lpor.201600165
摘要
Abstract A semiconductor optical amplifier at 2.0‐µm wavelength is reported. This device is heterogeneously integrated by directly bonding an InP‐based active region to a silicon substrate. It is therefore compatible with low‐cost and high‐volume fabrication infrastructures, and can be efficiently coupled to other active and passive devices in a photonic integrated circuit. On‐chip gain larger than 13 dB is demonstrated at 20 °C, with a 3‐dB bandwidth of ∼75 nm centered at 2.01 µm. No saturation of the gain is observed for an on‐chip input power up to 0 dBm, and on‐chip gain is observed for temperatures up to at least 50 °C. This technology paves the way to chip‐level applications for optical communication, industrial or medical monitoring, and non‐linear optics. image
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