原子层沉积
等温过程
沉积(地质)
吸附
切姆金
材料科学
限制
饱和(图论)
图层(电子)
热力学
化学
化学工程
分析化学(期刊)
纳米技术
物理化学
有机化学
物理
机械工程
工程类
数学
古生物学
组合数学
沉积物
生物
燃烧
作者
Thokozani Justin Kunene,Rigardt Alfred Maarten Coetzee,Lagouge K. Tartibu,Tien‐Chien Jen
标识
DOI:10.1016/j.matpr.2022.02.083
摘要
This paper simulated the Atomic Layer Deposition process in the reactor scale using ANSYS® Fluent® 19.1 and ChemKin-PRO commercial packages to solve transport and chemistry equations. A 2D hot-walled isothermal viscous-flow ALD reactor was considered at a temperature of 473 K. Trimethlyaluminum and ozone were used as precursor A and reactant B respectively to obtain alumina. Various pulse deposition strategies of supercycles were modeled to enhance the surface reactions. They have been demonstrated to effectively prevent temporary steric hindrance and assist with saturation for self-limiting adsorption. The numerical model of each precursor dose, as short pulses, was modeled for multiple numbers of cycles x (x > 1, x ∊ I). Compared to the conversational binary reaction (ABx deposition), there was an increase with growth per cycle of 0.44–1.13 nm/cycle range of outcome of all the supercycles strategies.
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