Comparison of polycrystalline and epitaxial Cu(In, Ga)Se2 solar cells with conversion efficiencies of more than 21%

微晶 外延 硒化铜铟镓太阳电池 材料科学 太阳能电池 光电子学 能量转换效率 工程物理 化学 纳米技术 物理 冶金 图层(电子)
作者
Jiro Nishinaga,Yukiko Kamikawa,Takeyoshi Sugaya,Shogo Ishizuka
出处
期刊:Solar Energy Materials and Solar Cells [Elsevier BV]
卷期号:269: 112791-112791
标识
DOI:10.1016/j.solmat.2024.112791
摘要

Polycrystalline Cu(In,Ga)Se2 (CIGS) solar cells are widely studied for their application in thin-film photovoltaics, but analysis of their crystalline properties is difficult owing to the presence of grain boundaries and defects. Epitaxial CIGS (epi-CIGS) solar cells can potentially address the issues of polycrystalline CIGS (poly-CIGS) solar cells, but their conversion efficiency has not been widely studied. We fabricated epi-CIGS layers using techniques developed for high-efficiency ploy-CIGS solar cells such as Ga grading, Na doping, and heat-light soaking. Here, scanning transmission electron microscopy and secondary ion mass spectrometry were used to compare the structural characteristics of poly- and epi-CIGS solar cells with conversion efficiencies of more than 21%. Both types of solar cells had similar Ga gradient profiles, and abrupt interfaces were observed between the CIGS and Mo, CIGS and GaAs, and CdS and CIGS layers. The poly-CIGS layer had a higher Na concentration than the epi-CIGS layer because the grain boundaries of the former included high concentrations of Na ions. Meanwhile, the Na ions in the epi-CIGS layer promoted the interdiffusion of In and Ga. For both types of solar cells, heat-light soaking increased the carrier concentration by more than 1 × 1017 cm−3. These observations suggest that grain boundaries are not the main factor limiting the conversion efficiency of poly-CIGS solar cells.

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