异质结
材料科学
光电子学
光电探测器
掺杂剂
与非门
纳米技术
纳米电子学
逆变器
电子线路
数码产品
兴奋剂
逻辑门
电压
电子工程
电气工程
工程类
作者
Wennan Hu,Wang Hu,Jianguo Dong,Haoran Sun,Yue Wang,Zhe Sheng,Zengxing Zhang
标识
DOI:10.1021/acsami.2c21785
摘要
Two-dimensional (2D) van der Waals heterostructures based on transition metal dichalcogenides are expected to be unique building blocks for next-generation nanoscale electronics and optoelectronics. The ability to control the properties of 2D heterostructures is the key for practical applications. Here, we report a simple way to fabricate a high-performance self-driven photodetector based on the MoTe2/MoSe2 p–n heterojunction, in which the hole-dominated transport polarity of MoTe2 is easily achieved via a straightforward thermal annealing treatment in air without any chemical dopants or special gases needed. A high photoresponsivity of 0.72 A W–1, an external quantum efficiency up to 41.3%, a detectivity of 7 × 1011 Jones, and a response speed of 120 μs are obtained at zero bias voltage. Additionally, this doping method is also utilized to realize a complementary inverter with a voltage gain of 24. By configuring 2D p-MoTe2 and n-MoSe2 on demand, logic functions of NAND and NOR gates are also accomplished successfully. These results present a significant potential toward future larger-scale heterogeneously integrated 2D electronics and optoelectronics.
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