材料科学
薄膜
电介质
纳米片
微观结构
压电
基质(水族馆)
分析化学(期刊)
电极
钙钛矿(结构)
单层
粒度
复合材料
纳米技术
光电子学
化学工程
物理化学
海洋学
化学
色谱法
地质学
工程类
作者
Hosung Shin,In‐Su Kim,Jong–Un Woo,Seok‐June Chae,Bumjoo Kim,Sahn Nahm
摘要
A Sr2Nb3O10 (SNO) nanosheet was deposited on a Pt/Ti/SiO2/Si (Pt–Si) substrate using the Langmuir–Blodgett technique. An SNO monolayer was used as the seed layer for the growth of a crystalline 0.97(Na0.5K0.5)(Nb0.91Sb0.09)O3–0.03CaZrO3 (NKNS–CZ) thin film at a low temperature of 400 °C. The NKNS–CZ thin film grew along the [001] direction, and it had a dense microstructure with an average grain size of 75 nm. The dielectric constant of the film was 250, with a low dielectric loss of 3.5% at 100 kHz. The leakage current density of the Pt/NKNS–CZ top-electrode interface was approximately 1.3 × 10−6 A/cm2 at 0.05 MV/cm. Additionally, a slightly increased leakage density (8.1 × 10−5 A/cm2 at 0.05 MV/cm) was observed at the NKNS–CZ/SNO/Pt–Si bottom-electrode interface. Hence, the film exhibited relatively good insulating properties. The d33 and d33 × g33 values of the thin film were approximately 270 pm/V and 32.9 pm2/N, respectively. These are the largest d33 and d33 × g33 values reported until now. Therefore, the NKNS–CZ thin film shows excellent piezoelectric properties, and it can be used for fabricating thin-film piezoelectric energy harvesters.
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