Piezophototronic Effect Enhanced Flexible Tunneling Devices by Separating the Photosensitive Layer and the Piezoelectric Modulation Layer

The piezo-phototronic effect uses the piezoelectric potential/piezoelectric charge generated by the piezoelectric semiconductor material to regulate the energy band structure and photogenerated carrier behavior at the interface/junction, thereby modulating the device's performance. The positive/negative piezoelectric charges generated at the interface of piezoelectric semiconductors can reduce the electron/hole barriers and thus enhance the transport of photogenerated carriers. However, electron/hole potential wells are formed when the electron/hole potential barrier caused by positive/negative piezoelectric charges is lowered too much, hindering the transport of photogenerated carriers. It is difficult to balance the relationship between potential barriers and potential wells while introducing the piezo-phototronic effect. In this work, a physical mechanism by separating the photosensitive layer and the piezoelectric modulation layer is proposed to deal with the above-mentioned issue in flexible tunneling devices. The piezoelectric modulation layer is solely used to adjust the electron/hole barriers, while the photosensitive layer is used to absorb photons and generate photogenerated carriers. This avoids the limitation on the transport of photogenerated carriers caused by potential wells in the piezoelectric semiconductor, thereby significantly increasing the adjustable range of the barriers. Experimental results show that the photoresponsivity of the flexible p-Si/Al